SiGe/Si(001) relaxed buffer layer (grown by CVD) subjected to etching. Investigations of forming SiGe Ťartificial substratesť.

Image courtesy of Shaleev  M, Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia.
Sample courtesy of  Kuznetsov O., Novikov A., Shuleshova I., Shaleev M., Physical-Technical Research Institute, Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia.