NANOFAB 100 platform: MBE GaAs module

The MBE GaAs module is intended for epitaxial growth of classic compositions of A_IIIB_V type on substrates of up to 100 mm diameter.

Design of this module allows using classic effusion cells, loaded with solid material and gaseous source of ammonia, as sources of growth components. During transportation into the chamber and in the process of growing, the substrate (and its holder) is fixed horizontally with its growth surface oriented face down. This minimizes chances of uncontrolled contamination. The cylindrical ultra-high vacuum chamber provides the “vertical” growth geometry with the horizontal orientation of the substrate.

COMPONENTS OF MBE GaAs MODULE

• Two extended-area cryo-panels, which provide high speed evacuation of volatile components of As and which minimize the probability of getting the growth products from the cryo-panels into the sources of material.
• Three-joint growth manipulator with a fastening device for the substrate holder, which provides the possibility to adjust the growth geometry by means of a large vertical travel range (80 mm).
• Built-in quadrupole type analyzer of residual atmosphere.
• Flange of the evaporators’ module, which enables up to 8 molecular sources of various types to be installed on DN63CF flanges symmetrically with respect to the vertical axis of the chamber.