NANOFAB 100 platform: MBE GaN module

General information Overall dimensions 3D model

The molecular beam epitaxy module is intended for epitaxial growth of semiconductive heterostructures of III-group nitrides and it is configured to grow materials of InAlGaN/GaN system using ammonia as a source of active nitrogen.

During transportation into the chamber and in the process of growing, the substrate is fixed in its holder horizontally with its growth surface oriented face down. This minimizes chances of uncontrolled contamination. Extended-area cryo-panels are used for efficient evacuation of volatile components of group V, and their design minimizes the probability of getting the growth products from the cryo-panels into the sources of material. The pumping system incorporates a high-capacity turbo-molecular corrosion-free pump and it extends the technology capabilities to grow heterostructures within more concentrated flows of ammonia in conjunction with extremely high (>1000°C) temperature of the substrate.

A notable feature of the design is the possibility to adjust the growth geometry by means of a large vertical travel range (76 mm) of the growth manipulator. This feature makes it possible to combine two operational growth positions within the same chamber: (i) “research”, to perform growth without rotating the substrate holder using fast electrons diffraction and laser interference (with measures taken to provide sufficient homogeneousness of the epitaxial film), and (ii) “production”, to perform growth with rotation so as to provide high homogeneousness of the film on large-sized substrates.