NANOFAB 100 platform: MBE cluster

Molecular beam epitaxy cluster

This cluster contains:

• GaAs molecular beam epitaxy module (MBE GaAs module)
• GaN molecular beam epitaxy module (MBE GaN module) 
• Ultra-high vacuum module for sample storage, revolution, transportation (SSRT module)
• Loading module for batch techniques (FDL module)
• Ultra-high vacuum radial distribution center/module (RDC module)
   

   The molecular beam epitaxy cluster is intended for epitaxial growth of classic compositions of AIIIBV type and semiconductive heterostructures of III-group nitrides on substrates of up to 100 mm diameter.

   It is also possible to grow materials of InAlGaN/GaN using ammonia as a source of active nitrogen.

• Cluster Overall dimensions - 360х280 cm.