NANOFAB 100 platform: MBE cluster
Molecular beam epitaxy cluster
This cluster contains:
The molecular beam epitaxy cluster is intended for epitaxial growth of classic compositions of AIIIBV type and semiconductive heterostructures of III-group nitrides on substrates of up to 100 mm diameter.
It is also possible to grow materials of InAlGaN/GaN using ammonia as a source of active nitrogen.