NANOFAB 100 platform: MBE modules

NANOFAB 100 platform contains two types of ultra-high vacuum modules for Molecular Beam Epitaxy (UHV MBE) - MBE GaAs module and MBE GaN module. Those modules are intended for fabrication of semiconductive heterostructures on the basis of arsenides and nitrides of group III of metals and they can be used to create, in particular, СВЧ instruments and all-in-one integral microcircuits:

• MESFET GaAs
• pHEMT AlGaAs
• Ga(Al)N for powerful SHF transistors

The base set of the UHV MBE modules consists of three chambers: growth, air-locking and preparation. Cylindrical growth chambers provide nowadays “vertical” growth geometry with the substrate placed horizontally.