Processing equipment: ETNA-100-PT

General information Technical characteristics Processing capabilities Overall dimensions

Plasma chemical etching system  ETNA-100-PT serves for:

1. Plasma cleaning samples of diameters up to 100 nm before further processing
2. Plasma chemical reactive etching, including etching a variety of materials (semiconductors Si, Ge, GaAs, GaN, AII BVI; metals; dielectrics; oxides and nitrides) through a wide mask
3. Removing masks of resist material after photolithography.

Plasma chemical etching through masking layers is a promising technology in MEMS manufacturing. Independent control over density and over concentration of active ions and radicals in high-density plasma is enabled by two sources. Those sources combined with an effective system of cooling the substrate (for higher mask endurance and for providing a so-called Bosch process) allows for easy integration of the system into a processing chain for MEMS manufacturing.