Size: 0.35x0.2 um
Semiconductor layer InGaAs 47 nm thickness. Layer is grown by Atomic Layer MBE on GaAs substrate at 5000C.
Image courtesy of Eremenko V., IMT RAS, Russia.
Sample courtesy of Dr. Luisa Gonzalez, Institute of Microelectronics CSIC, Madrid, Spain.
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Name: InGaAs
Semiconductor layer InGaAs 47 nm thickness. Layer is grown by Atomic Layer MBE on GaAs substrate at 5000C.
Image courtesy of Eremenko V., IMT RAS, Russia.
Sample courtesy of Dr. Luisa Gonzalez, Institute of Microelectronics CSIC, Madrid, Spain.
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