Name:	Monolayer steps on the Si surface
SPM principle:	Semicontact techniques
MDT-file:	si_low_t_buffer.mdt (516.84 Kb)

Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.
Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA