Size: 38x38 nm
STM image of the same LB film after local exposure to the electric pulse with the smaller tip-surface separation (t=15mcs, a=5V, s=0.5nm). Well-like defect appearance indicates the other mechanism of surface modification - insulating region formation. LB film was formed by MDT-LB5.
V.A.Bykov. Langmuir-Blodgett films and nanotechnology. Biosensor & Bioelectronics Vol. 11, No. 9, pp.
923-932, 1996
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Name: STM Lithography
STM image of the same LB film after local exposure to the electric pulse with the smaller tip-surface separation (t=15mcs, a=5V, s=0.5nm). Well-like defect appearance indicates the other mechanism of surface modification - insulating region formation. LB film was formed by MDT-LB5.
V.A.Bykov. Langmuir-Blodgett films and nanotechnology. Biosensor & Bioelectronics Vol. 11, No. 9, pp.
923-932, 1996
|
