Size: 17x17 um
Spiral stage on the surface of Si(111) formed as the result of a beat of the screw dislocation, and 2D negative islands (depth — 0.31 nm; lateral sizes — tens of nanometer) after thermal annealing of the silicon in oxygen atmosphere.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.
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Name: Surface of Si(111)
Spiral stage on the surface of Si(111) formed as the result of a beat of the screw dislocation, and 2D negative islands (depth — 0.31 nm; lateral sizes — tens of nanometer) after thermal annealing of the silicon in oxygen atmosphere.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia. |
