Size: 10.8x10.7 nm
Test grating on the silicon wafer with concentration Nn=1015 cm-3, step 3µm, height 0,1µm from SiO2. Ion implantation by boron with E=30 keV and dose 150mkCoulomb/cm2, then pressing during 60 minutes under temperature T=1000 C and finally SiO2 etch removal have been done. As result the following structure was obtained: left image - topography, right image - SCM.
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Name: Test grating with different doping stripes
Test grating on the silicon wafer with concentration Nn=1015 cm-3, step 3µm, height 0,1µm from SiO2. Ion implantation by boron with E=30 keV and dose 150mkCoulomb/cm2, then pressing during 60 minutes under temperature T=1000 C and finally SiO2 etch removal have been done. As result the following structure was obtained: left image - topography, right image - SCM.
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