Basics

Oxidation influence. GaAlAs/GaAs laser structure.

    References

1. A. V. Ankudinov, V. P. Evtikhiev, V. E. Tokranov, V. P. Ulin, A. N. Titkov, Semiconductors, May 1999, Volume 33, Issue 5, pp. 555-558 "Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers". (pdf-file)

AFM images are obtained by commercial SPM P4 with NSG11 cantilevers.
Additional information about laser structures were received with usage of Contact EFM, Kelvin mode.