Practice details

Oxidation influence. GaAlAs/GaAs laser structure .

 See practice details of topography acquisition, ZnSSe/GaAs laser structure.

Specific parameters of the scan can be found in f4.opt and f4.mdt.   

    References

1. A. V. Ankudinov, V. P. Evtikhiev, V. E. Tokranov, V. P. Ulin, A. N. Titkov, Semiconductors, May 1999, Volume 33, Issue 5, pp. 555-558 “Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers”. (pdf-file).